JXP1N20MRG
The JXP1N20MRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
ID =1A,VDS=200V
RDS(ON)(Typ.)=1.65Ω@VGS=10V
RDS(ON)(Typ.)=1.85Ω @VGS=4.5V
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
APPLICATION
PWM applications
Load switch
