SLN30P03T
This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- P-Channel:-30V -35A
RDS(on)Typ= 8mΩ@VGS = -10 V
RDS(on))Typ= 13mΩ@VGS =- 4..5V
- Very Low On-resistance RDS(ON)
- LowCrss
- Fast switching
- 100% avalanche tested
Application
PWM Application
Load Switch
Power Management
