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N 型场效应管

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Jingxin Technology(靖芯科技)

N 型场效应管

JXP2N7002VRG

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


GENERAL FEATURES
VDS = 60V,ID = 0.38A
RDS(ON) < 3.0Ω @ VGS=4.5V
RDS(ON) < 2.3Ω @ VGS=10V
Dual N-Channel MOSFET
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Rating: >2000V HBM

APPLICATION
PWM applications
Load switch
需要样品测试或详细资料请联系：18126521362（点击复制微信号）

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