N 型场效应管

JXP30N06G

The JXP30N06G uses advanced power trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.


GENERAL FEATURES
ID =30A,VDS=60V
RDS(ON)(Typ.)=28mΩ@VGS=10V
RDS(ON)(Typ.)=34mΩ@VGS=4.5V
Low Gate Charge
Advanced High Cell Density Trench
Technology
100% EAS Guaranteed

APPLICATION
Power Management Switches
DC/DC Converters
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