专用NVM存储器

FM25NQ04Tx

FM25NQ04Tx is a 4Mbit dual interface Flash with flexible tag function. The 4Mbit data memory and the dedicated tag memory can be accessed by both SPI interface and ISO/IEC 14443A compatible RF interface. When tag memory accessed by RF interface, the device is fully compatible with NFC Forum Type 2 tag. The device can also access tag memory through the conventional address by SPI interface. This feature ensures a flexible NFC tag application.


Features
Contact Interface
– 2.7V~3.6Vsingle power supply
– Typical standby current <5uA
– Standard SPI: CLK, CS#, DI, DO, WP#
– Dual SPI: CLK, CS#, DQ0, DQ1, WP#
– Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
– QPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
– Max data memory FAST_READ clock frequency: 50MHz
– Max data memory READ clock frequency: 33MHz
– Typical data memory page program time: 0.35ms
– Typical data memory sector erase time: 50ms
– Typical data memory block erase time: 500ms
– Typical data memory chip erase time: 32s
– Byte and Page Write (up to 16 bytes) for tag memory
– Random and Sequential read for tag memory
– 5MHz compatibility for tag memory operation
RF Interface
– ISO/IEC 14443A compatible
– Contactless data transmission
– Enhanced RF performance using contact power
– Carrier frequency: 13.56 MHz
– Data transfer rate: 106/212/424/848 kbit/s
– UID & Counter ASCII Mirror for automatic serialization NDEF messages
– Originality signature
– True anticollision
– Tag operation: 4 bytes Write, 16 bytes /Fast Read
– Data Memory operation: Page program (up to 256 bytes), sector/block erase, Random read (up to 256 bytes)
– Support sleep mode
Memory
– Data Memory: 4Mbit Flash
128 uniform sectors with 4K-byte each
8 uniform blocks with 64K-byte each or
16 uniform blocks with 32K-byte each
256 bytes per programmable page
100,000 program/erase cycles
Data retention: 20 years
– Tag Memory:
Part number Tag memory - user data
FM25NQ04T1 144 bytes
FM25NQ04T2 504 bytes
FM25NQ04T3 888 bytes
FM25NQ04T4 1884 bytes
Self-timed write cycle (5 ms max)
Endurance: 1 million write cycles
Data retention: 40 years
Security
– Software and hardware write protection for data memory
– Software write protection of tag memory in SPI interface
– Password protection for status register and RF data write
– Unique ID for each device
User configurable General purpose output
Energy harvesting and Field detection
– Configurable Energy harvesting(EH) or Field detection(FD) output
– Configurable EH output voltage: 1.5V, 1.8V,2.5V and 3.3V
– Configurable EH limited current:: 0.5mA, 1mA, 2mA and no limit
– Configurable FD output voltage: 1.5V, 1.8V,2.5V and 3.3V
– Configurable FD trigger action: upon any RF field presence, upon request, upon the selection of the tag and upon halt with previous read operation
Green Package
– RoHS Compliant and Halogen-free
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