N 型场效应管

JXP10N03G

The JXP10N03G uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.


GENERAL FEATURES
ID =10A,VDS=30V
RDS(ON)(Typ.)=27mΩ@VGS=4.5V
RDS(ON)(Typ.)=18mΩ@VGS=10V
High power and current handing capability
Lead free product is acquired
Surface mount package

APPLICATION
PWM applications
Load switch
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