N 型场效应管

JXP3N06MRG

The JXP3N06MRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.


GENERAL FEATURES
VDS =60V,ID =3.2A
RDS(ON)(Typ.)=90mΩ @VGS=4.5V
RDS(ON)(Typ.)=75mΩ @VGS=10V
High power and current handing capability
Lead free product is acquired
Surface mount package

APPLICATION
PWM applications
Load switch
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