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N 型场效应管

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首页 Jingxin Technology(靖芯科技) N 型场效应管

Jingxin Technology(靖芯科技)

N 型场效应管

JXP3N10MRG

The JXP3N10MRG uses Shield Gate Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.


GENERAL FEATURES
ID =3.2A,VDS=100V
RDS(ON)(Typ.)=100mΩ@VGS=10V
RDS(ON)(Typ.)=130mΩ@VGS=4.5V
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation

APPLICATION
PWM applications
Load switch
需要样品测试或详细资料请联系：18126521362（点击复制微信号）

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