中低压MOSFET

SLD60N02T

This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.


Features
- N-Channel:20V 60A
RDS(on)Typ= 4.5mΩ@VGS = 4.5 V
RDS(on))Typ= 6.5mΩ@VGS = 2.5V
- Very Low On-resistance RDS(ON)
- LowCrss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability

Application
PWM Application
Load Switch
Power Management
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