N 型场效应管

JXP2N7002KRG

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


GENERAL FEATURES
VDS = 60V,ID = 0.3A
RDS(ON) < 3.0Ω @ VGS=4.5V
RDS(ON) < 2.3Ω @ VGS=10V
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
ESD Rating: >2000V HBM

APPLICATION
PWM applications
Load switch
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